UDAI PRAKASH; DR. NAVAID Z. RIZVI; HERMAN-AL-AYUBI. Structural Reliability of AlGaN/GaN High Electron Mobility Transistors. Journal of Electronic Design Engineering, [S. l.], v. 5, n. 1, p. 15–28, 2019. Disponível em: https://www.matjournals.co.in/index.php/JOEDE/article/view/6695. Acesso em: 12 may. 2025.